国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8） H01（8） C23（4）
IPC小类 C30B（8）
IPC H01L021/02（8）
发明人 FIMLAND B M（2） MUNSHI M（2） WEMAN H（2）
公开年 2021（8）
申请年 2020（4）  2021（4） 
专利权人 CRAYONANO AS（2）

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B