国家/地区 中国（10）
IPC部 C（10）
IPC大类 C30（10） C23（3） C01（2）
H01（2）
IPC小类 C30B（10）
IPC C30B029/02（5） C23C016/26（2） C30B025/00（2）
C30B025/08（2） C30B025/18（2）
发明人 ZHANG H（10）
公开年 2015（4） 2021（2）
申请年 2013（2）  2014（2）  2015（2）  2021（2） 
专利权人 SHANGHAI INS.（5）

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q

Two-dimensional molecular crystal-graphene oxide heterojunction used in e.g. optoelectronic technology, and photoelectric synapses comprises semiconductor materials and nanomaterials composed of two-dimensional molecular crystals of planar conjugated organic small molecules and graphene oxide.

HUANG W, LI Y, ZHANG H, DONG X, LIU J

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Two-dimensional carbon-nitrogen single crystal alloy comprises carbon skeleton of graphene and doping nitrogen atom.

CUI P, ZENG Z, ZHANG H, ZHANG Z

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Saturable absorber device for fiber laser, has saturable absorber material supported by optical fiber, which is provided with graphene, graphene-polymer composite, graphene oxide, graphene derivative or functionalized graphene.

LOH K P, BAO Q, TANG D Y, ZHANG H, KIAN L P, BAO O, LOH K, TANG D