国家/地区 中国（12） 韩国（11） 世界知识产权组织（10） 美国（8） 欧洲专利局（EPO）（7） 日本（6） 法国（3）
IPC部 C（25）
IPC大类 C30（25） C01（17） B82（8）
C23（8） H01（7） B32（5）
B01（2）
IPC小类 C30B（25）
IPC C30B029/36（25）
发明人 CHOI J W（2） JANG H（2） LEE D（2）
LEE S（2） MITSURU M（2） NORIYUKI M（2）
OH E（2） OUERGHI A（2） TAKAYASU O（2）
TAKUJI M（2）
公开年 2015（4） 2014（3） 2009（2） 2012（2） 2013（2） 2016（2） 2017（2） 2022（2）
申请年 2013（3）  2014（3）  2016（3）  2021（3）  2008（2）  2009（2）  2011（2）  2012（2） 
专利权人 CENT NAT REC.（2） LG CHEM LTD（2） ROHM CO LTD（2） UNIV KYUNGHE.（2）

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Substrate used for semiconductor module applications e.g. diode modules, comprises silicon carbide single crystal substrate, graphene layer, silicon carbide epitaxial growth layer, and polycrystalline layer, in order.

MAKOTO T, TAKUJI M, MITSURU M, NORIYUKI M, TAKAYASU O

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z

Preparation of single-crystal silicon carbide/graphene composite nanofiber used in e.g. nano optoelectronic device, involves heating silicon carbide nanofibers, vacuumizing with vacuum pump, and removing silicon from nanofibers.

CHEN J, DING L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F