国家/地区 中国（4） 韩国（4） 日本（3） 美国（3） 台湾（2） 世界知识产权组织（2）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C30B（13）
IPC C30B029/02（5） C01B032/186（4） C01B032/184（3）
C01B032/194（3） C01B032/198（3） C30B025/18（3）
B82Y020/00（2） B82Y040/00（2） C01B032/05（2）
C01B032/156（2） C01B032/16（2） C01B032/168（2）
C01B032/956（2） C23C016/02（2） C23C016/26（2）
发明人
公开年 2022（13）
申请年 2021（13）
专利权人

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Manufacture of expanded graphite for forming exfoliated graphene oxide, involves adding iron(III) salt to mixture containing potassium manganese oxide, graphite and sulfuric acid/phosphoric acid to form solid graphite-intercalated compound, separating obtained compound and heating.

CHEN A, SALVERDA M, THIRUPPATHI A R, SIDHUREDDY B, RAHMATI F