国家/地区 美国（4） 韩国（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C30B（9）
IPC B82Y030/00（5） B82Y040/00（5） C01B032/184（4）
C01B032/194（4） C30B029/02（3） C01B032/182（2）
C30B001/02（2） C30B029/16（2） C30B029/64（2）
H01L029/16（2）
发明人
公开年 2018（9）
申请年 2017（4）  2018（3）  2016（2） 
专利权人

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H

Growing thickness of reduced graphene oxide comprises dispersing reduced graphene oxide powder, adding metal nano powder to obtain dispersed mixture, drying dispersed mixture, and heating.

JEE Y H, LEE S H, KIM K W

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Preparation of nanowire-shaped organic single crystal domain for use in organic semiconductor device, involves spin-coating surface of copper-based graphene with poly(methyl methacrylate), annealing, depositing pentacene molecular film.

DOU W, SHI B

Composition of matter used as hydrogen storage material, comprises transition metal doped magnesium nanocrystal encapsulated with reduced graphene oxide.

URBAN J J, RUMINSKI A M, CHO E S, BARDHAN R, BRAND A, WOOD B C, HEO T W, SHEA P T, KANG S Y, ZHOU X

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Transition metal nanoparticles incorporation involves exposing aqueous solution of graphene-based compound having predetermined concentration and aqueous solution containing metal, where reaction occurs in open system.

SAKATA S K, RIBEIRO SOMESSARI E, DA SILVEIRA C G, SILVA E SOUSA T

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I