国家/地区 中国（5）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8）
IPC C23C016/26（4） C30B029/02（4） C23C014/18（3）
C23C014/30（2） C23C014/35（2） C23C014/58（2）
C23C016/02（2） C23C016/455（2） C30B023/02（2）
C30B025/18（2） C30B029/40（2）
发明人 HU J（2） HU Y（2） LI P（2）
PAN M（2） PENG J（2） QIU W（2）
公开年 2020（8）
申请年 2020（5）  2019（2） 
专利权人 UNIV NAT DEF.（2）

Nonenzymatic glucose sensor fabrication involves providing bottom substrate, preparing graphene layer on bottom substrate, depositing multiple amount of zinc oxide seed crystals on graphene layer, and then growing zinc oxide seed crystals.

CHEN H, SU W, YEH Y, CHANG C

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W

Producing pressure sensor by depositing silicon oxide layer on silicon wafer surface, depositing chromium/gold layer, penetrating metal and oxide layers, nanostructuring silicon, depositing aluminum film on wafer and transferring graphene.

AVRAM M A, AVRAM M, TINCU B C, VOITINCU C, TUCUREANU V, MATEI A, BURINARU T A, MARCULESCU C V