国家/地区 中国（29） 美国（7） 世界知识产权组织（3） 韩国（2）
IPC部 C（37）
IPC大类 C30（37） H01（14） C01（10）
C23（7） B05（2） B82（2）
C04（2） C09（2） C22（2）
IPC小类 C30B（37）
IPC C30B029/02（14） C30B025/18（12） C30B029/40（6）
H01L021/02（6） C30B025/10（5） C01B032/186（4）
C30B025/00（4） C30B025/08（4） C30B025/16（4）
C01B032/194（3） C01B032/198（3） C30B025/14（3）
C30B029/04（3） C30B029/06（3） C30B029/16（3）
发明人 LI J（3） LI Y（3） LIU J（3）
ZHANG S（3） BAI Y（2） CHEN J（2）
HAO X（2） LIU K（2） SUN H（2）
WANG E（2） WANG P（2） WANG X（2）
WANG Y（2） YU D（2） ZHANG B（2）
公开年 2021（37）
申请年 2021（37）
专利权人 SUN H（2） UNIV PEKING（2）

Long-life guide cylinder comprises e.g. outer layer as pre-oxidized felt insulating felt, middle layer as modified resin formed on inner side wall of outer layer, and inner layer as carbon/carbon composite material formed on inner side wall of middle layer.

BAI Y, QIN X, LIU Y, ZHOU J

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate, involves adding polyvinylpyrrolidone to adjust viscosity of nanosheet solution, using spin coater to adsorb substrate, growing single crystals on mask substrates.

LV H, WU Y, HAO X, HU H, SHAO Y, ZHANG B

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Fuel cell e.g. proton exchange membrane fuel cell, comprises core-shell nanostructure comprising palladium nano-substrate having cubic shape coated with uniform atomic overlayers of epitaxially deposited zero-valent platinum atoms.

ZHANG L, PARK J, WANG X, CHOI S, XIE S, XIA Y

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T