国家/地区 中国（15）
IPC部 C（15）
IPC大类 C30（15） C01（5） C23（5）
B82（4） H01（3）
IPC小类 C30B（15）
IPC C30B025/10（15）
发明人 SUN H（2）
公开年 2021（5） 2011（3） 2020（2）
申请年 2021（4）  2020（3） 
专利权人 SUN H（2）

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H