国家/地区 中国（29）
IPC部 C（29）
IPC大类 C23（29）
IPC小类 C23C（29）
IPC C30B025/18（17） H01L021/02（15） C30B029/02（12）
C23C016/26（10） C30B029/40（10） C01B031/04（8）
C23C016/02（8） C23C016/34（8） B82Y040/00（7）
C23C014/06（7） H01L021/20（7） H01L021/205（6）
H01L029/16（6） B82Y030/00（5） C01B031/02（5）
发明人 HAO Y（3） NING J（3） VEERASAMY V（3）
VEERASAMY V S（3） WANG D（3） ZHANG J（3）
CHEN Z（2） FAN F Y（2） FAN S（2）
GI Y（2） LI P（2） WEI Y（2）
公开年 2022（6） 2021（4） 2011（3） 2013（3） 2016（3） 2012（2） 2014（2） 2015（2） 2023（2）
申请年 2022（5）  2012（4）  2016（4）  2021（4）  2020（3）  2009（2）  2014（2） 
专利权人 UNIV XIDIAN（4） GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）
SHANGHAI INS.（3） HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B