国家/地区 中国（13） 世界知识产权组织（6） 欧洲专利局（EPO）（4） 日本（4） 韩国（4） 美国（4） 加拿大（3）
IPC部 C（17）
IPC大类 C30（17）
IPC小类 C30B（17）
IPC C30B029/02（17）
发明人 HU J（2） HU Y（2） LI P（2）
LI Y（2） MANCEVSKI V（2） PAN M（2）
PENG J（2） QIU W（2） VLADIMIR M（2）
公开年 2021（12） 2020（5）
申请年 2020（17）
专利权人 UNIV NAT DEF.（2） UNIVERSAL MA.（2）

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Method for transferring graphene onto a polymer substrate has given carrier for electronics.

GREBENKO A K, AITKULOVA A D, KRASNIKOV D V, NASIBULIN A G

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B