国家/地区 中国（24） 世界知识产权组织（6） 韩国（4） 日本（3） 美国（3） 台湾（2）
IPC部 C（37）
IPC大类 C30（37）
IPC小类 C30B（37）
IPC C30B025/18（14） C30B029/02（13） H01L021/02（8）
C30B029/40（7） C30B025/16（5） C01B032/186（4）
C23C016/02（4） C23C016/26（4） B82Y040/00（3）
C01B032/184（3） C01B032/194（3） C01B032/198（3）
C30B001/10（3） C30B023/02（3） C30B028/14（3）
发明人 FENG H（3） TANG J（3） WANG Y（3）
ZHANG J（3） CHEN X（2） HAO Y（2）
LI P（2） LI X（2） MA P（2）
MITSURU M（2） NING J（2） NORIYUKI M（2）
PAN Y（2） SHAO C（2） TAKAYASU O（2）
公开年 2022（37）
申请年 2021（37）
专利权人 CEC COMPOUND.（2） ROHM CO LTD（2） UNIV SHANDON.（2） UNIV XIDIAN（2）

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Constant temperature device for crystal growth, has connecting block that is fixedly connected with seed crystal rod whose lower end is connected with crystal through straight slot.

YANG J

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R