国家/地区 中国（12） 世界知识产权组织（3） 日本（2） 台湾（2）
IPC部 C（15）
IPC大类 C30（15）
IPC小类 C30B（15）
IPC H01L021/02（10） C30B025/18（9） C30B029/40（6）
C23C016/26（4） C30B029/02（4） C01B032/186（3）
C30B033/12（3） C01B032/182（2） C23C014/06（2）
C23C014/35（2） C23C016/02（2） C23C016/34（2）
C23C016/40（2） C23C016/455（2） C30B025/16（2）
发明人 BEN J（2） CHEN Y（2） JIANG K（2）
LI D（2） SUN X（2） ZHANG S（2）
公开年 2022（10） 2023（5）
申请年 2022（15）
专利权人 CHANGCHUN IN.（2） TOKYO ELECTR.（2）

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J