国家/地区 中国（12） 美国（2）
IPC部 C（14） H（3） B（2）
IPC大类 C30（14） C01（3） H01（3）
C23（2）
IPC小类 C30B（14）
IPC C30B029/02（14）
发明人 LIU K（2） SUN H（2） WANG E（2）
WANG X（2） YU D（2） ZHANG Z（2）
公开年 2021（14）
申请年 2021（14）
专利权人 SUN H（2）

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Fuel cell e.g. proton exchange membrane fuel cell, comprises core-shell nanostructure comprising palladium nano-substrate having cubic shape coated with uniform atomic overlayers of epitaxially deposited zero-valent platinum atoms.

ZHANG L, PARK J, WANG X, CHOI S, XIE S, XIA Y

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z

Preparation method of single crystal graphene conductive ink involves obtaining predetermined amount of single crystal graphene, and preparing ink based on predetermined amount of single crystal graphene.

CHEN J, LIU W