国家/地区 中国（14）
IPC部 C（14）
IPC大类 C30（14） C23（5） H01（3）
C01（2）
IPC小类 C30B（14）
IPC C30B029/02（7） C30B025/18（5） C30B029/64（5）
C23C016/26（4） C23C016/54（3） C30B025/00（3）
C30B025/02（3） C30B023/00（2）
发明人 LI Z（3） ZHANG Y（3） DUAN Y（2）
HUANG D（2） LI X（2） LIU K（2）
LIU Z（2） PENG H（2） SHI H（2）
WANG E（2） WU J（2） WU M（2）
XU X（2） YU D（2） YU J（2）
公开年 2017（8） 2018（6）
申请年 2017（14）
专利权人 UNIV PEKING（4） CHONGQING GR.（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. cutting the copper-based graphene, annealing, heating, and naturally cooling, and loading graphene substrate.

DOU W

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z