国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） C23（6） H01（4）
C01（3） B82（2）
IPC小类 C30B（11）
IPC C30B025/18（11）
发明人 DENG P（4） GUO H（4） LEI T（4）
ZHANG K（4） ZHANG Y（4） CHAI Z（2）
FAN S（2） HAN D（2） HAO Y（2）
LV J（2） NING J（2） WANG D（2）
WEI Y（2） YAN Y（2） ZHANG J（2）
公开年 2012（6） 2013（5）
申请年 2012（11）
专利权人 UNIV XIDIAN（6） HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparing large-sized monocrystalline graphene and its continuous film, useful in e.g. gas sensor, comprises utilizing chemical vapor deposition process, heat treating metal substrate, catalytically cracking, growing, and splicing.

CHENG H, GAO L, GAO Y, MA L, MA T, REN W

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y