国家/地区 中国（13）
IPC部 C（13）
IPC大类 C30（13） C23（4） B82（2）
C01（2）
IPC小类 C30B（13）
IPC C30B029/02（13）
发明人 CHEN X（3） SUN L（3） CHEN Z（2）
LIN L（2） LIU Z（2） PENG H（2）
SUI Y（2） XU X（2） YU G（2）
ZHANG H（2） ZHANG Y（2） ZHAO X（2）
公开年 2015（7） 2016（5）
申请年 2015（13）
专利权人 UNIV PEKING（3） SHANGHAI INS.（2） UNIV SHANDON.（2）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.

LIN L, LIU Z, PENG H, SUN L

Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source.

LI X

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Three-dimensional non-catalytic substrate-loading graphene film structure used for e.g. microelectromechanical system device comprises non-catalytic substrate, etched surface body three-dimensional structure and graphene thin film cover.

DU C, SHEN J, SHI H, YANG J, WEI D, YU C, SONG X, YU Y

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Preparation of single-crystal graphene involves taking metal foil, covering lower and upper surfaces with semiconductor layer to obtain laminated structure, placing in air evacuated enclosed container, adding hydrogen and argon and heating.

WANG X, LI J, ZHONG Q, ZHONG Y

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X