国家/地区 中国（25）
IPC部 C（25）
IPC大类 C30（25） C01（9） H01（9）
C23（8） B01（3） B82（3）
C04（3）
IPC小类 C30B（25）
IPC C30B029/02（13） C30B025/18（8） H01L021/02（5）
C30B029/64（4） B82Y040/00（3） C01B032/186（3）
C01B032/188（3） C23C014/18（3） C23C014/30（3）
C23C016/02（3） C23C016/26（3） C30B001/02（3）
C30B025/10（3） C30B025/16（3） C30B029/38（3）
发明人 PENG J（3） FIMLAND B M（2） HU J（2）
HU Y（2） LI C（2） LI P（2）
LI Y（2） LIU Z（2） MANCEVSKI V（2）
MUNSHI M（2） PAN M（2） QIU W（2）
SUN L（2） VLADIMIR M（2） WANG Y（2）
公开年 2021（16） 2020（9）
申请年 2020（25）
专利权人 CRAYONANO AS（2） UNIV NAT DEF.（2） UNIVERSAL MA.（2）

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Preparing ditelluride nanosheet comprises mixing and reacting metal ditelluride crystals, alkali metal salt and aprotic solvent to obtain intermediate inserted with alkali metal ions, and exfoliating with alkali metal ions in protic solvent.

WU C, PENG J, GUO Y, XIE Y

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Graphene-reinforced silicon carbide heating rod comprises silicon carbide, graphene oxide boron, boron carbide, surfactant and binder in cold area and silicon carbide, boron carbide, surfactant and binder in hot zone.

SHEN L, DAI P, JI C, WANG Y

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C