国家/地区 中国（34）
IPC部 C（34）
IPC大类 C30（34） C23（9） H01（9）
C01（6） B82（4）
IPC小类 C30B（34）
IPC C30B025/02（34）
发明人 ZHANG Y（8） LEI T（5） LI X（5）
WANG D（5） ZHANG J（5） CHAI Z（4）
DENG P（4） GUO H（4） HAN D（4）
HAO Y（4） NING J（4） YAN Y（4）
ZHANG K（4） WANG H（3） CHEN X（2）
公开年 2012（6） 2014（4） 2017（4） 2011（3） 2013（3） 2015（3） 2016（2） 2018（2） 2019（2） 2022（2）
申请年 2012（6）  2013（5）  2015（4）  2016（4）  2011（3）  2017（3）  2021（3）  2010（2）  2019（2） 
专利权人 UNIV XIDIAN（9） CHONGQING GR.（2） SHANGHAI INS.（2） UNIV FUDAN（2）
UNIV SHANDON.（2）

Method for rapidly growing double-layer graphene single crystal, by adding catalyst and polished copper foil into two quartz boats, annealing the copper foil in a vacuum atmosphere, passing hydrogen and carbon dioxide into quartz tube, and removing the copper foil from the center of tube furnace.

TANG C, GONG P, SUN Z

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Preparation of double-layer torsion angle graphene monocrystalline wafer, by annealing copper-nickel monocrystalline substrate in chemical vapor deposition furnace under gas atmosphere of argon and hydrogen to improve crystal quality, and growing under atmosphere of argon, hydrogen and methane.

XIE X, YU Q, ZHAO Y, ZHANG X

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y