国家/地区 中国（20）
IPC部 C（20）
IPC大类 C30（20） C01（6） C23（6）
H01（5） B82（3）
IPC小类 C30B（20）
IPC C30B029/02（12） C30B025/18（9） C30B029/64（6）
C23C016/26（5） C01B032/186（4） C30B025/02（4）
B82Y040/00（3） C30B025/00（3） B82Y030/00（2）
C01B032/194（2） C30B029/36（2） C30B029/52（2）
H01L021/02（2）
发明人 LI Z（3） XU X（3） ZHANG J（3）
ZHANG Y（3） CHEN X（2） CHENG X（2）
MA Q（2） SUN L（2） YANG Z（2）
YU F（2） ZHANG Z（2） ZHAO X（2）
公开年 2017（20）
申请年 2016（9）  2017（8）  2015（3） 
专利权人 SHANDONG BEN.（2） SHANGHAI INS.（2） UNIV PEKING（2） UNIV SHANDON.（2）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises e.g. cleaning copper substrate, growing graphene layer, aluminum nitride thin layer by atomic layer deposition process and post processing.

WANG W, LI Z, LONG H, LI M, ZHANG J

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y