国家/地区 中国（16）
IPC部 G（16） H（16） B（2）
IPC大类 G01（16）
IPC小类 G01J（16）
IPC G01J005/20（16）
发明人 HU H（4） DU C（3） FENG S（3）
SHI H（3） WEI X（3） YANG J（3）
TANG L（2）
公开年 2018（6） 2021（6） 2016（4）
申请年 2018（5）  2021（5）  2015（3） 
专利权人 JIANGSU XINC.（4） CHINESE ACAD.（3）

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Germanium-doped long wave infrared terahertz detector array used in e.g. weather forecast, has absorption region array and common electrode which are located on front surface of wafer, and back electrode passivation layer located on barrier sheet electrode.

DAI N, YIN Z, SHAN Y, DOU W, LIU C, WANG Y, DENG H

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Dual-mode non-refrigeration infrared detector heat-sensitive layer structure, has thermo-sensitive film layer provided with amorphous germanium silicon film, where sides of germanium silicon film are connected with vanadium oxide film.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Two-dimensional magnetic film heterojunction non-refrigeration infrared detector has top electrode layer, and transparent top gate insulating layer containing high-dielectric material e.g. hafnium dioxide and poly(methyl methacrylate).

LONG M, WANG R, SHAN L, LI F, HAN T

Superconducting transition-edge thermal sensor, comprises a superconducting film defining an active area (SC) for incidence of quanta there, in that superconducting film is made of a superconductor exhibiting a charge carrier density.

EFETOV D, SEIFERT P, LU X, DURAN J, STEPANOV P, EFETOV D K

Carbon electronic transition-edge sensor superconducting device, has diamond substrate layer whose upper side is formed with graphene layer, where upper side of graphene layer is formed with superconducting thin film layer.

HU H

Graphene TES superconducting device, has substrate layer whose upper side is arranged with graphene layer, and titanium film layer arranged on graphene layer, where upper side of graphene layer is fixed with superconducting thin film layer.

HU H

Aluminum nitride-base graphene TES superconducting device, has aluminum nitride substrate layer whose upper side is formed with graphene layer, where upper side of graphene layer is formed with superconducting thin film layer.

HU H

Gallium nitride-based graphene TES superconducting device, has gallium nitride substrate layer whose upper side is fixed with graphene layer, where upper side of graphene layer is fixed with superconducting thin film layer.

HU H