国家/地区 世界知识产权组织（5） 中国（4） 美国（4） 韩国（3）
IPC部 H（11） C（4） B（3）
G（3）
IPC大类 H01（11） C01（3） G01（3）
B82（2） C23（2）
IPC小类 H01J（11）
IPC H01J037/32（5） H01J037/20（3） C01B032/186（2）
G01N001/28（2） H01J001/304（2） H01L021/00（2）
H01L021/67（2）
发明人 CHOI S M（2） CUI S（2） JANG D Y（2）
JEON M（2） JEON M S（2） JIN R（2）
JUNMINSUNG（2） KIM Y S（2） MIN C S（2）
ZHANG D（2）
公开年 2023（11）
申请年 2022（11）
专利权人 SEMES CO LTD（2）

Direct-current plasma system for processing of substrate, includes direct-current plasma reaction chamber configured to contain direct-current plasma that is generated between anode and cathode of the direct-current plasma reaction chamber.

GODDARD W A, MARGOLESE D I, ANZ S J, SANDO S F

Field emission element has emitter that is provided with pointed tip formed on substrate, and gate electrode having opening portion exposing tip of emitter formed on substrate via insulating layer, and comprises a polycrystalline, multilayer graphene film.

MASAYOSHI N, HIROMASA M, KATSUHISA M, NAGAO M, MURATA H, MURAKAMI K

Pressure difference diaphragm used for electron microscope, has graphene film that is set on diophragm sheet, and covers diophagm hole, and is used for preventing gas passing through and for electron beam to pass through.

NIE J, ZHENG Z, HAO H, CUI M, CAO G, MIAO L, XU J

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Graphene grid used for structural analysis of substance e.g. beta-galactosidase, vacuolar-type adenosine triphosphatase and ferritin, using cryo-electron microscope, has structure in which functional group containing silicon atom and/or phosphorus atom are introduced on graphene surface.

HARUYASU A, MAIKO M, TSUYOSHI I

Substrate treating apparatus for treating substrate using plasma, has chamber having treating space, support unit positioned within treating space and configured to support substrate, and plasma generation unit configured to generate plasma from process gas supplied to the treating space.

JANG D Y, CHOI S M, KIM Y S, JEON M S, JUNMINSUNG, MIN C S, ZHANG D, CUI S, JIN R, JEON M

Substrate treating apparatus, has plasma generation unit comprising bottom electrode and top electrode opposite bottom electrode, where top electrode comprises plate and electrode layer on plate.

JIN Y J, KIM J H, JANG D Y, CHOI S M, KIM Y S, JEON M S, JUNMINSUNG, MIN C S, YOUNGJO J, JIN Y, KIM J, ZHANG D, CUI S, JIN R, JEON M

Preparation method of graphene-based composite material involves using mixed gas of argon gas and hydrogen as carrier gas, and obtaining graphene-based composite material by chemical vapor deposition, where graphene material grows parallel to substrate in composite material.

WEI M, CHEN L, GUO X, ZHAO Y, LI X, ZENG F, TANG S, TANG Z

Thin-film-based assembly for analyzing e.g. proteins in graphene liquid cell, has support base and thin film placed on support base, where spherical nanoparticle is placed between thin film and support base.

VAN DEURSEN P M G