国家/地区 美国（21） 中国（19） 韩国（19） 日本（12） 世界知识产权组织（12） 欧洲专利局（EPO）（5） 西班牙（3） 台湾（3） 印度（2）
IPC部 C（42）
IPC大类 C23（42）
IPC小类 C23C（42） C01B（26） H01L（14）
B82Y（13） B32B（10） B05D（8）
C30B（5） H01B（5） B82B（4）
B01J（3） C03C（2） C25D（2）
IPC C23C016/26（42）
发明人 HONG B H（4） BAE S K（3） CHOI J（3）
LIU J（3） RAO Z（3） SEO D（3）
XIA Y（3） BAE S（2） CHUNG H（2）
CHUNG H J（2） HEO J（2） HEO J S（2）
HUH J（2） HUH J S（2） JUNG H（2）
公开年 2011（42）
申请年 2010（23）  2011（14）  2009（5） 
专利权人 UNIV SUNGKYU.（6） SAMSUNG ELEC.（5） INST MICROEL.（3） JIAXING MICR.（3）
GRAPHENE SQU.（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
UNIV YONSEI .（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Method of growing graphene directly on substrate involves placing substrate material into plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating substrate, and supplying carbureted hydrogen gas and other inert gas.

SHI D, ZHANG G, ZHANG L

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Preparation of graphene film involves obtaining electroplated copper substrate, growing graphene on substrate by heating under normal pressure by chemical vapor deposition using methane and mixed gas of argon and hydrogen and cooling.

LI T, WANG W, WANG Y, ZHOU Y

Making graphene sheet useful as transparent electrode involves forming film of graphitizing catalyst; heat-treating gaseous carbon source in the presence of the catalyst to form graphene, and cooling graphene to form graphene sheet.

CHOI J, SHIN H, YOON S

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M