国家/地区 中国（13） 美国（2） 世界知识产权组织（2）
IPC部 C（11） B（5） H（4）
IPC大类 C01（5） C23（4） H01（4）
B82（3） B05（2） B32（2）
IPC小类 C01B（5） C23C（4） B05D（2）
B32B（2） B82Y（2） H01L（2）
H01M（2）
IPC C01B031/04（5） B82Y040/00（2） H01M004/38（2）
发明人 WANG C（14）
公开年 2012（14）
申请年 2012（8）  2011（6） 
专利权人 UNIV SHANGHA.（4）

Synthesization of graphene in oil phase involves adding dry-ground graphite oxide into organic solvent, dispersing ultrasonically, adding phosphorus trichloride, carrying out reduction reaction, adding alcohol, filtering and drying.

WANG C, CHU L, ZHOU J, QI H, SU X

Reduction of graphene oxide to prepare graphene, involves dispersing graphene oxide in water, adding sodium-tellurium hydride solution, reacting, filtering, washing solid with sodium borohydride aqueous solution and water, and drying.

WANG C, ZHANG Y, HAN C, SUN L, LIU B

Graphene modified carbon cathode material for use in lithium ion battery, comprises graphite and cathode material.

CHEN X, SONG H, WANG C

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Composite dielectric film material has composite dielectric film located on surface of substrate, and comprising compounded polyvinylidene fluoride and graphene.

CHEN Y, LONG J, XU J, YANG Y, YANG W, WANG C

Nanocomposite material coating comprises nano hydroxyl apatite and graphene.

CHEN Y, LIU W, YUE C, ZHANG L, ZHU G, WANG C

Method for manufacturing FET e.g. self-aligned graphene FET for graphene device, involves inhibiting deposition of metal layer over specific portion of thin film proximate foot region by head region of gate electrode.

ZHOU C, BADMAEV A, WANG C, CHE Y

Improving graphite interlayer distance, comprises placing the graphite oxide in a cobalt-60 irradiation source chamber, carrying out irradiation, and peeling a surface of the graphite oxide to obtain graphene nano-sheets.

CHEN G, CHEN L, GUO Q, QIAN X, WANG C, XU Z, ZHANG Y

Preparing graphene composite film on silicon wafer surface comprises silicon wafer surface assembled with amino silane film, soaking in graphene oxide suspension, and drying and heating film to obtain the reduced graphene composite film.

CHENG H, CHENG X, LEI Z, SHU D, WANG C

Reduction-oxidation graphene film formation on titanium alloy sheet surface includes immersing graphene oxide powder into rare earth modifier, filtering, and drying to obtain solid graphene oxide.

CHENG H, LI P, CHENG X, SHU D, WANG C