国家/地区 日本（16）
IPC部 C（16） B（9） H（7）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C01B031/02（16） C23C016/26（11） C01B031/04（6）
B82Y030/00（5） B82Y040/00（4） C23C016/02（3）
H01B013/00（3） B21B001/40（2） B32B009/00（2）
C22C009/00（2） C22C009/02（2） C22F001/00（2）
C22F001/08（2） C23C016/44（2） C23C016/511（2）
发明人 CHIBA G（2） CHIBA Y（2） SATO M（2）
公开年 2013（16）
申请年 2012（16）
专利权人 JX NIPPON MI.（2） NIPPON MININ.（2） NIPPON MININ.（2） UNIV NAGOYA（2）

Manufacture of graphene film used for e.g. gas barrier film, involves depositing graphene film on base material surface maintained at specified temperature and pressure by microwave surface wave plasma chemical vapor deposition method.

TSUGAWA K, YAMADA T, HASEGAWA M

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Manufacture of graphene structure used in electronic device, involves providing catalyst metal layer on insulation film layer, supplying carbon in plasma state under specified conditions, and forming graphene layer.

EGAWA T, FUJITA K

Manufacture of graphene-like substance for electronic device involves heating substrate, introducing gas containing hydrocarbon, and forming graphene-like substance on substrate by plasma chemical vapor deposition method.

SUGITA H, KISHI N, SOGA T, JIMBO T

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Flexible substrate processing apparatus used for reducing graphene oxide to form graphene comprises substrate carrying-out portion; reduction treatment portion; washing portion; drying portion; and substrate carrying-in portion.

TAKAHASHI M, SAITO Y, MOMO J, MORIWAKA T, KUSUMOTO N, MORIWAKA K, YONEDA Y