国家/地区 美国（14） 世界知识产权组织（13） 中国（12） 韩国（9） 日本（3）
IPC部 C（18）
IPC大类 C01（18） C23（9） H01（9）
B82（6） B01（4） C09（3）
B32（2） C30（2）
IPC小类 C01B（18） C23C（9） B82Y（5）
H01L（5） B01J（4） H01B（4）
B32B（2） C30B（2）
IPC C01B032/186（18）
发明人 YOON J（3） YOON J H（3） LI Y（2）
NA D（2） NA D H（2）
公开年 2014（18）
申请年 2013（10）  2014（7） 
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） HANWHA AEROS.（3） SHANGHAI INS.（2）
UNIV CALIFOR.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Preparation of three-dimensional structured graphene and carbon nanotube material used for optoelectronic device, involves preparing substrate, growing graphene on substrate, patterning, preparing catalyst and growing carbon nanotubes.

LI Z, BAI B, YANG X, DAI Q, HE F, QIU X, KONG X

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Preparation of germanium-doped graphene involves placing substrate in catalytic reactor under vacuum condition, adding carbon element and germanium element to reactor and processing.

LIN Z

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H