国家/地区 韩国（650）
IPC部 C（646） H（33） B（5）
F（3）
IPC大类 C01（646） H01（33） C23（9）
B05（5） F16（3）
IPC小类 C01B（646） H01L（33） C23C（9）
B05D（4） B05B（3） F16K（3）
IPC C01B031/04（646） H01L041/18（23） H01L041/22（23）
C23C016/26（9） H01L041/08（7） H01L041/187（6）
H01L041/047（5） B05D001/00（4） H01L029/78（4）
H01L041/02（4） H01L041/25（4） B05B001/30（3）
C01B031/02（3） H01L029/16（3） H01L041/253（3）
发明人 LEE Y T（650）
公开年 2016（650）
申请年 2015（586）  2016（37）  2014（27） 
专利权人 LEE Y T（650）

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor for controlling on/off of electricity, comprises source electrode, drain electrode, and graphene connected to source electrode.

LEE Y T

Electron tunneling graphene transistor has crossed obstacle regulating circuit that is equipped with lower portion of piezo material.

LEE Y T

Transistor has crossed obstacle regulating circuit that is equipped in lower portion of Piezo material, and drain electrode to control height of Fermi level of graphene so that on/off of electricity is controlled.

LEE Y T

Graphene bending position and work function adjusting-type transistor, has regulating circuit whose portion is contained with magnetic particle to regulate electrostatic level, where magnetic particle controls height of schottky obstacle.

LEE Y T

Manufacturing graphene atomic layer used for manufacturing electronic component, involves etching graphene and irradiating graphene with energy source, where graphene is equipped with one or more layers.

LEE Y T

Producing graphene atomic layer etched graphene, comprises providing self-assembled monolayer mask on surface the graphene having at least one layer, and irradiating energy sources on the graphene for etching.

LEE Y T

Manufacture of graphene used for manufacturing electronic component, involves providing self-assembled monolayer mask on graphene atomic layer, and etching graphene atomic layer by irradiating energy source.

LEE Y T

Transistor useful as graphene single-electron transistor and graphene electron tunneling transistor to adjust on/off electricity in central processing unit, memory and battery, comprises e.g. source electrode, drain electrode and graphene.

LEE Y T