国家/地区 美国（27）
IPC部 B（27）
IPC大类 B82（27） C01（27） H01（14）
C23（7） C08（6） B01（5）
C30（4） C09（3） B22（2）
C07（2） C22（2） G01（2）
G03（2）
IPC小类 B82Y（27）
IPC B82Y030/00（27）
发明人 JANG B Z（4） ZHAMU A（4） KATAGIRI M（3）
MIYAZAKI H（3） SAKAI T（3） ANZELMO B H（2）
BIENER J（2） COOK D（2） GHEZELBASH H（2）
OHTOMO M（2） OTOMO M（2） SINGH S（2）
TANNER D（2） WORSLEY M A（2） XIONG W（2）
公开年 2018（27）
申请年 2017（16）  2018（10） 
专利权人 NANOTEK INST.（4） LAWRENCE LIV.（3） TOSHIBA KK（3） FUJITSU LTD（2）
LYTEN INC（2）

Etching graphene nanostructure involves providing a piece of highly oriented pyrolytic graphite which includes first window, second window, and third window, where first window and second window includes one or more electrode contacts.

DARLING M J

New 2,6-di(1,1'-binaphthyl-2-yl)biphenyl derivatives useful as a precursor of a graphene nanoribbon.

OHTOMO M, OTOMO M

Slurry for manufacturing graphene sheet combining graphite flake structure comprises solvent in which graphite nanoplatelet material comprising graphite nanoplatelets and graphene material comprising graphenes are mixed.

CHOU T, WU F, CHAN C, LIAO W, CHANG H, LI L, ROSS J

Dry graphene transfer includes e.g. contacting graphene on growth substrate with azide end-group on rinsed modified transfer substrate and transfer printing, and separating transfer substrate with attached graphene from the growth substrate.

LOCK E H, BARAKET M, WALTON S G, LASKOSKI M, SHEEHAN P E, MULVANEY S P, HINES D R

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Producing graphene directly from pulp, paper, or paper product involves subjecting pulp, paper, or paper product to graphitization treatment at graphitization temperature in non-oxidizing environment.

ZHAMU A, JANG B Z

Graphene production used in slurry supercapacitor, sodium battery, or lithium battery, involves dispersing graphitic material in liquid solution to prepare suspension.

LIN Y, ZHAMU A, JANG B Z

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Carbon aggregate for produces higher-order carbon substance, comprises two connected multi-walled spherical fullerenes and layers of graphene and coating, where coating is connected with multi-walled spherical fullerenes.

COOK D, GHEZELBASH H, ANZELMO B H, TANNER D, SINGH S

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H