国家/地区 美国（13）
IPC部 C（13）
IPC大类 C01（13） H01（13） B82（4）
C23（4） C30（2）
IPC小类 C01B（13）
IPC H01L029/16（13）
发明人 IFUKU R（2） MATSUMOTO T（2）
公开年 2018（13）
申请年 2017（8）  2018（4） 
专利权人 SAMSUNG ELEC.（2） TOKYO ELECTR.（2）

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Planarizing irregularities in graphene layer surface formed on substrate, comprises planarizing graphene layer by removing convex portion by anisotropically etching using plasma etching in in-plane direction from edge portion of graphene.

IFUKU R, HIGUCHI H, MATSUMOTO T

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Forming heterojunction structure used e.g. in material engineering, comprises providing graphene pattern on substrate, applying current to heat graphene pattern and forming two-dimensional material layer on graphene pattern.

YU Y, JUN Y Y

Graphene precursor comprises insulator layer, where top portion of insulator layer is electrical insulator, metal layer is in contact with covering portion of insulator layer, carbon layer is in contact with metal layer.

BUSCH J, LINDAMOOD L

Process for preparing graphene layer with better electrical conductivity, involves doping zone of graphene layer to form doped graphene zone including stabilized sheet resistance, where doping is carried out by surface of graphene layer.

LE POCHE H, CARELLA A, DIJON J, OKUNO H, RAUX E