国家/地区 美国（29） 韩国（28） 中国（11） 欧洲专利局（EPO）（8） 台湾（4） 世界知识产权组织（2）
IPC部 H（30） C（8） B（3）
G（3）
IPC大类 H01（29） C23（4） C01（3）
B23（2） C09（2） G06（2）
IPC小类 H01L（26） C23C（4） C01B（3）
B23K（2） H01J（2） H01M（2）
IPC H01L021/02（11） H01L021/768（10） H01L029/16（9）
H01L023/532（7） H01L029/06（5） H01L029/24（5）
H01L029/66（5） H01L021/285（4） H01L023/00（4）
H01L023/522（4） H01L027/108（4） H01L029/45（4）
H01L029/786（4） H01L023/528（3） H01L029/417（3）
发明人 SHIN H（20） SHIN H J（18） BYUN K（9）
SHIN K（9） BYUN K E（8） SEOL M（7）
SHIN K W（7） LEE M（6） SHEN X（6）
CHO Y（5） CHO Y C（5） LEE C（5）
KIM S（4） KWON J（4） LEE C S（4）
公开年 2022（33）
申请年 2021（33）
专利权人 SAMSUNG ELECTRONICS CO LTD（33）

Interconnect structure used in electronic device, comprises conductive wiring having certain pattern, dielectric layer on side surfaces of conductive wiring, capping layer on conductive wiring and graphene layer on dielectric layer.

SHIN H, BYUN K, SHIN J, SHIN K, SHIN K W, BYUN K E, SHIN H J

Interconnect structure used in electronic device, comprises dielectric layer, conductive interconnect on dielectric layer and graphene cap layer on conductive interconnect, where graphene cap layer contains graphene quantum dots.

SHIN H, BYUN K, KIM S, SEOL M, SHIN K, SHIN K W, BYUN K E, SHIN H J

Lithium battery, e.g. solid state battery, used in electric vehicles, comprises cathode, anode, liquid-impermeable ion-conductive membrane, and interlayer has metal-carbon composite between anode and liquid-impermeable ion-conductive membrane.

LEE M, KIM J, ROEV V, KIM J S

Field effect transistor structure comprises a fin-shaped channel protruding from a substrate and extending in one direction, a source electrode on one side of the fin-shaped channel, and a drain electrode separated from the source electrode with the fin-shaped channel.

LEE E, YANG B, KIM S, CHOI T, LEE M, SHIN H, KIM C, SHIN H J, HYUN L, CHOI T J, YANG B S

Thin-film structure used in semiconductor element, comprises substrate, nanocrystalline graphene layer on substrate, and two-dimensional material layer on nanocrystalline graphene layer, where substrate is silicon, silicon dioxide, aluminum oxide, quartz, germanium, gallium nitride, aluminum nitride.

CHO Y, LEE Z, SHIN H, SONG S, SON S, KIM J, KWON S, LEE C, LEE C S, YONG K S, KIM J H, SONG S U, SHIN H J, YI J H, CHO Y C

Producing graphene-based separator by heat-treating graphene oxide to form nanoporous graphene comprising multiple pores, oxidizing with oxidizing agent to functionalize oxygen functional groups, and stacking functionalized graphene.

KIM D W, KANG J H, KIM I, CHOI D C, RYU S Y

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Semiconductor device comprises two-dimensional material layer between metal layer and semiconductor layer, and metal compound layer between two-dimensional material layer and semiconductor layer.

SHIN H, SHIN K, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN K W, SHIN H J

Patterning two-dimensional material layer comprises forming two-dimensional material layer in both first region and second region, and removing two-dimensional material layer from second region based on using physical removal method.

CHO Y, YOO M, SHIN H, KWON J, SEOL M, NGUYEN V L, SHIN H J, YOO M S, CHO Y C