国家/地区 中国（115）
IPC部 C（115）
IPC大类 C23（115）
IPC小类 C23C（108） C01B（18） B22F（14）
C25D（12） H01L（11） C22C（10）
C09D（8） C23F（8） B05D（7）
C23G（6） C30B（6） B82Y（5）
H05K（5） H01M（4） B23K（3）
IPC C23C016/26（33） C23C014/35（16） C23C014/06（12）
C01B032/194（10） C23C014/58（10） C23C028/00（10）
C23C014/02（9） C23C016/44（9） C23C016/02（8）
C23C026/00（8） C23C014/16（7） B22F009/04（6）
C23C014/18（6） C23C016/455（6） C23C016/458（6）
发明人 MA Y（8） WANG X（8） LI J（6）
LI P（6） ZHANG J（6） LI Y（5）
LIU J（5） QI Y（5） WANG H（5）
WANG J（5） CHEN J（4） CHENG Y（4）
FENG H（4） LI X（4） LIU Z（4）
公开年 2022（115）
申请年 2021（115）
专利权人 SHANGHAI XIN.（4） ZHEJIANG CHI.（4） BEIJING GRAP.（3） CHINA NUCLEA.（3）
UNIV CHINA G.（3） UNIV CHINA G.（3） UNIV PEKING（3） BEIJING TECH.（2）
FOSHAN CATEC.（2） HANGZHOU PER.（2） SK ON CO LTD（2） UNIV CHINA E.（2）
UNIV SHANGHA.（2） UNIV ZHEJIAN.（2）

Preparing metal-based graphene composite material, comprises mixing graphene slurry and metal powder to form mixed slurry, and forming mixed slurry into metal-based graphene composite material by chemical vapor deposition in oxygen-free environment.

QIAN T, CAO H, SHEN H, LV X, MA Y

Mechanical hand for film continuous graphene film continuous scale deposition device, has screw rod whose end is installed on driving device, and push rod slidably mounted on screw rod along length direction of screw rod.

XIE S

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Graphene/graphite-phase carbon nitride/titanium dioxide composite coating with photoelectric response characteristics bone-forming function in preparing bone repairing, replacing material, comprises graphite phase carbon nitride/titanium dioxide composite coating formed on surface of metal substrate.

ZHENG X, XIE Y, SHAO D, LIU S, YAN Z, LI K

Preparing graphene-like material comprises heating copper substrate, depositing precursor molecule onto copper substrate to obtain chlorine-based graphene by self-assembly through dehalogenation reaction, where precursor molecule is 2,4,6-trichloro-1,3,5-triazine molecule.

KONG H, CHENG S, RU J, PENG X, QIAN Y

Preparing metal nanoparticle comprises placing boron powder and metal in cleaned crucible, degassing, annealing single crystal metal sheet substrate, growing single layer of boron on substrate and depositing metal on boron-coated substrate by vacuum heating and forming metal dispersion.

DAI D, MA Z, ZHAO X, WANG H

Preparation of two-dimensional chromium material involves mixing chromium source with additive material to form first gaseous precursor and processing sulfide source to form second gaseous precursor, and transferring first and second gaseous precursors to substrate and heating obtained substrate.

XIAO H, XU M

Preparing corrosion resistant coating electrode used for circulating external drainage and desalting comprises polishing and deionized water titanium base plate into acid solution, etching, using cathode and anode salt solution as electrolyte, coating graphene dispersion liquid, and drying.

ZHANG J, MIAO Y, YAN Z, MENG Z, FAN L, LI Y, SONG C, XIU C, ZHANG Q, WU X, XIE X, WANG X

Composite base system for thin film deposition device, has first base comprising top surface and bottom surface opposite to each other, and radio frequency heating coil coaxially surrounded around second base.

LIU L, ZHENG D, XU C

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M