国家/地区 中国（8） 日本（2） 世界知识产权组织（2）
IPC部 C（12） H（3） B（2）
IPC大类 C30（12） C23（8） C01（3）
H01（3） C22（2）
IPC小类 C30B（12）
IPC C30B029/02（12）
发明人
公开年 2022（12）
申请年 2022（12）
专利权人 SHANGHAI INS.（2）

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.

XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T