国家/地区 美国（36）
IPC部 H（34） C（11） G（7）
B（2）
IPC大类 H01（33） C23（6） C01（5）
C09（4） G03（2） G06（2）
IPC小类 H01L（30） C23C（6） C01B（5）
C09K（2） G03F（2） H01J（2）
H01M（2） H01S（2）
IPC H01L021/02（12） H01L021/768（10） H01L029/16（8）
H01L023/532（7） H01L021/285（5） H01L029/45（5）
C23C016/26（4） H01L023/522（4） H01L027/108（4）
H01L029/06（4） H01L029/24（4） H01L029/66（4）
H01L029/786（4） H01L023/00（3） H01L023/528（3）
发明人 SHIN H（22） SHIN H J（21） BYUN K（10）
BYUN K E（9） SHIN K（9） SHIN K W（8）
CHO Y（7） KIM S（7） LEE C（7）
SHEN X（7） CHO Y C（6） LEE C S（6）
LEE M（6） SEOL M（6） LEE E（5）
公开年 2022（36）
申请年 2021（29）  2022（7） 
专利权人 SAMSUNG ELECTRONICS CO LTD（36）

Interconnect structure used in electronic device, comprises conductive wiring having certain pattern, dielectric layer on side surfaces of conductive wiring, capping layer on conductive wiring and graphene layer on dielectric layer.

SHIN H, BYUN K, SHIN J, SHIN K, SHIN K W, BYUN K E, SHIN H J

Interconnect structure used in electronic device, comprises dielectric layer, conductive interconnect on dielectric layer and graphene cap layer on conductive interconnect, where graphene cap layer contains graphene quantum dots.

SHIN H, BYUN K, KIM S, SEOL M, SHIN K, SHIN K W, BYUN K E, SHIN H J

Photodetector for use in image sensor, comprises first electrode, collector layer on first electrode, tunnel barrier layer on collector layer, graphene layer on tunnel barrier layer, emitter layer on graphene layer, and second electrode on emitter layer comprising second semiconductor material.

SHIN H, KIM H, LEE J, JO S

Soluble graphene quantum dot used in light-emitting material and organic light-emitting device, comprises anthracenyl N-alkyl maleimide functional group at edge.

SHIN H, NIU W, MUELLEN K, LIU J, WU F, FENG X, KIM S, LIANG P, WHOOPENG, MULLEN K, WENHUI N, SHIN H J

Lithium battery, e.g. solid state battery, used in electric vehicles, comprises cathode, anode, liquid-impermeable ion-conductive membrane, and interlayer has metal-carbon composite between anode and liquid-impermeable ion-conductive membrane.

LEE M, KIM J, ROEV V, KIM J S

Field effect transistor structure comprises a fin-shaped channel protruding from a substrate and extending in one direction, a source electrode on one side of the fin-shaped channel, and a drain electrode separated from the source electrode with the fin-shaped channel.

LEE E, YANG B, KIM S, CHOI T, LEE M, SHIN H, KIM C, SHIN H J, HYUN L, CHOI T J, YANG B S

Nonvolatile memory device for use in cellular phone, has many memory cell strings, each of the many memory cell strings has insulating spacers, gate electrodes each extending in first direction and alternately arranged with many insulating spacers in second direction perpendicular to first direction.

LEE C, SHIN H, OH Y, KIM T, LEE M, HYUN L, OH Y T, SHIN H J, LEE C S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Thin-film structure used in semiconductor element, comprises substrate, nanocrystalline graphene layer on substrate, and two-dimensional material layer on nanocrystalline graphene layer, where substrate is silicon, silicon dioxide, aluminum oxide, quartz, germanium, gallium nitride, aluminum nitride.

CHO Y, LEE Z, SHIN H, SONG S, SON S, KIM J, KWON S, LEE C, LEE C S, YONG K S, KIM J H, SONG S U, SHIN H J, YI J H, CHO Y C

Light-emitting device for e.g. displays, includes carbon-containing film comprising at least one carbon atom, and light-emitting alkylene group, where light-emitting group is chemically bonded to at least one carbon atom on surface of carbon-containing film.

HWANG K, CHOI H, KIM J, KWAK S, JEONG J, BAEK S, KIM S, BAIK M, JUNG Y, SIK C Y, BAEK M H, JUNG J H, KIM J H, CHOI H H, HWANG K Y