国家/地区 中国（13）
IPC部 C（13）
IPC大类 C30（13） C01（5） H01（5）
C23（2）
IPC小类 C30B（13）
IPC C30B025/18（5） C30B029/02（5） H01L021/02（4）
C30B025/16（3） C30B029/40（3） C01B032/186（2）
C30B001/10（2） C30B025/20（2） C30B029/20（2）
C30B029/62（2）
发明人 CHEN Y（2） LI Y（2） WANG G（2）
WANG X（2） ZHANG J（2）
公开年 2023（13）
申请年 2022（13）
专利权人

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparation of folding-resistant high-peeling aluminum-coated fabric involves coating coupling agent on etched surface of aluminum foil, coating conductive adhesive on coupling agent layer, pressing fabric on adhesive layer, and sewing.

CHEN Y, YE W, SUN Q, LONG X

Manufacture of ultra-low absorption sapphire involves doping substance that reduces absorption coefficient of sapphire into aluminum oxide to form mixture, placing mixture into crucible, vacuumizing and heating, necking and seeding, shouldering, performing isometric growth, cooling and annealing.

ZHANG Y, WANG Y, HUANG C, CHEN J, GAO C, ZHAO P, ZHOU N, CHENG G

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W