国家/地区 中国（11）
IPC部 C（11）
IPC大类 C01（11） C23（3）
IPC小类 C01B（11）
IPC C01B031/04（10）
发明人 ZHANG W（11）
公开年 2013（11）
申请年 2013（7）  2012（4） 
专利权人 CHONGQING IN.（4） UNIV CHINA E.（4） CHONGQING MO.（3）

Preparing graphene/nickel-zinc-cerium-iron oxide nano-absorbing material comprises e.g. dissolving nickel-zinc-cerium-iron oxide powder in N,N-dimethylformamide, dropping graphite oxide-N,N-dimethylformamide, reacting and vacuum drying.

HUANG Y, WANG K, ZHANG W, WANG Y, WU H, SANG Y

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Preparation of expanded graphene by foaming expansion involves adding graphite/polyurethane composite material into muffle furnace, controlling temperature increasing speed, maintaining, and cooling to room temperature in air.

ZHANG C, ZHANG W, DONG W, QIAN Y

Method for growing carbon nanotubes on surface of graphene involves mixing transition metal salt and graphene oxide, quick-freezing, vacuum-drying, heating dried solid sample, introducing high-purity argon gas, reacting and cooling.

ZHAO J, ZHANG S, ZHANG W, PAN Q, XING B

Preparation device of graphene, has growth chamber which is connected with vacuum-pumping device, and growth substrate of growth chamber is wound on coil that is connected with alternating current source.

SHI H, LI Z, DU C, ZHANG W

Preparation of epitaxial graphene, involves cleaning surface of silicon carbide substrate in induction heating graphite boat, evacuating, cooling, re-evacuating, and cooling to room temperature.

CHEN Y, HAO X, LI P, LI Y, WANG Z, ZHANG W, LIU J

Liquid phase fluorine intercalation of silicon surface silicon carbide epitaxial graphene comprises e.g. immersing cleaned sample to be intercalated in mixed acid solution, adding molybdenum metal, reacting, cleaning, and drying.

LI Y, LIU J, CHEN Y, HAO X, LI P, WANG Z, ZHANG W

Graphene preparation device comprises gas supply system connected with vacuum chamber set on two rollers, annealing system connected with vacuum chamber, and rotating roller driving system provided with growth substrate.

SHI H, LI Z, DU C, ZHANG W

Preparing large-scale graphene technology, comprises heating graphene growth foil belt via heating device in vacuum chamber filled with catalytic gas and carbon source gas, growing graphene on graphene growth foil belt, and cooling belt.

LI Z, SHI H, DU C, ZHANG W

Roll-to-roll graphene preparation device, comprises e.g. a sealed vacuum chamber and a roller comprising a driving roll for guiding graphene growing foil, growing roll for growing graphene and winding roll for winding graphene growing foil.

ZHANG W, LI Z, DU C, SHI H