国家/地区 中国（15）
IPC部 C（15）
IPC大类 C30（15）
IPC小类 C30B（15）
IPC C30B029/02（14） C30B025/18（6） C30B023/02（3）
C23C016/26（2） C30B025/02（2） C30B029/64（2）
发明人 CHEN X（15）
公开年 2015（3） 2011（2） 2012（2） 2016（2） 2017（2） 2022（2）
申请年 2015（3）  2016（3）  2010（2）  2011（2）  2021（2） 
专利权人 UNIV SHANDON.（9） CHINESE ACAD.（3） SHANDONG BEN.（2）

Preparing near free state single-layer graphene based on silicon carbide single crystal substrate comprises e.g. pre-processing surface of silicon carbide single crystal substrate wafer, heating pre-processed substrate silicon surface, performing hydrogen etching, and obtaining substrate.

XU X, XIE X, XIAO L, SHAO C, LI X, CHEN X, ZHANG F

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

Device for preparing large-size high-quality single crystal graphene on silicon carbide substrate, has intermediate frequency coil located for induction heating of graphite heating element in graphite crucible.

CHEN X, CHENG X, SUN L, YANG Z, XU S, YU F, ZHAO X

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X