国家/地区 中国（79）
IPC部 C（79）
IPC大类 C01（79） B82（19） H01（6）
C08（5） G01（5） B01（2）
B32（2） D01（2）
IPC小类 C01B（79）
IPC C01B031/04（79）
发明人 ZHANG J（79）
公开年 2016（27） 2014（16） 2015（12） 2013（11） 2012（9） 2010（2）
申请年 2015（22）  2013（18）  2016（14）  2014（11）  2012（8）  2009（3）  2011（2） 
专利权人 UNIV SHANGHA.（7） JINAN SHENGQ.（6） ANHUI YINENG.（5） UNIV SHANGHA.（4）
JINAN SHENGQ.（3） UNIV BOGHAI（3） UNIV FUDAN（3） UNIV HARBIN .（3）
UNIV WUHAN T.（3） ZHANG J（3） CHINESE ACAD.（2） CHINESE ACAD.（2）
HARBIN INST .（2） JINAN SHENGQ.（2） UNIV EAST CH.（2） UNIV HUAZHON.（2）
UNIV TAISHAN（2） UNIV TIANJIN.（2） UNIV ZHENGZH.（2）

Multistage graphene powder-separation device has separators performing thermal separation process, inlet, valve assembly equipped with explosion-proof motor and solenoid valve, outlet and electronic refrigeration device.

LI S, ZHANG B, ZHANG J

Preparation method of graphene nanobelts, involves heat-treating dried linear nano-crystals.

YU G, XU J, ZHANG J, WANG H

Preparing highly hydrophobic modified graphene oxide material comprises e.g. mixing graphene oxide with acyl chlorination reagent, transferring acylated chlorinated graphene into organic solution of p-toluidine and post-processing.

GENG H, WANG J, LUO Z, ZHANG X, LU Z, ZHANG J, DING E, YANG H, LI L

Preparing different-size graphene oxide composite super thermal agent comprises e.g. adding aqueous solution of oxidized graphene quantum dot in aqueous dispersion liquid of nano aluminum powder and mixing, and reacting.

GUO S, TAO Y, ZHANG J, YANG Y, SHEN W, WU H

Preparation of graphene-supported composite oxide material with uniform single oxide quantum dots, involves uniformly dispersing graphene in cosolvent, adding metal salt, heating, and calcining obtained precursor in inert atmosphere.

ZHUO L, ZHANG J

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Preparation of low temperature peeling-type modified graphene, involves inserting alkali metal ammonia in formation of ammonia ions into graphene layer and reacting ammonia electrons and modified group at defect site of graphene layer.

HUANG J, WANG B, ZHANG J, WU X

Preparing ultra three dimension graphene used for growing semiconductor material, involves pressing commercial three-dimensional foam metal into thin sheet.

HAO Y, NING J, WANG D, ZHANG J, LU Q, MU M

Preparing nitrogen-doped three-dimensional graphene involves utilizing fruit pericarp/peel as carbon source and nitrogen source, and hydrothermally carbonizing, activating by activating agent, pickling and drying fruit pericarp/peel.

MU S, ZHOU H, ZHANG C, ZHANG J

Preparing nitrogen self-doping porous graphene comprises taking porous bean shell as solid carbon and nitrogen source, ultrafine grinding, mixing with potassium hydroxide, activating, pickling, and freeze-drying.

MU S, ZHOU H, ZHANG C, ZHANG J