国家/地区 中国（16）
IPC部 C（16）
IPC大类 C30（16） C23（5） C01（2）
H01（2）
IPC小类 C30B（16）
IPC C30B029/02（7） C30B023/00（3） C30B025/00（3）
C30B025/18（3） C30B029/06（3） C01B032/194（2）
C23C014/24（2） C23C016/26（2） C23C016/54（2）
C30B025/02（2） C30B029/40（2） C30B029/54（2）
C30B029/64（2） C30B033/10（2）
发明人 CHI K（2） DOU W（2） GUO W（2）
LI X（2） LIU K（2） WANG S（2）
WANG X（2） ZHANG J（2） ZHANG Z（2）
公开年 2018（16）
申请年 2018（10）  2017（6） 
专利权人 UNIV PEKING（3） UNIV HUAZHON.（2） UNIV SHAOXIN.（2）

Preparing single crystal graphene sheet from papermaking black liquor used in transparent conductive materials, involves performing hydrothermal carbonization of papermaking black liquor, and adjusting reaction conditions.

WANG X, DING Z, WU P, LI F, SUN R

Monocrystalline quartz crucible has main body composed of silicon dioxide layer and anti-oxidation layer, graphene heat conducting plate, side socket, liquid guide opening, single crystal silicon substrate, spline ring, and upper cover.

PANG W

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H

Method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on surface of copper foil.

WANG S, GUO W, CHI K

Preparing graphene micro-nanocrystal array involves introducing methane and oxygen on surface of copper foil by chemical vapor deposition method to prepare graphene micro-nanocrystal array where methane gas is used as graphene carbon source.

WANG S, GUO W, CHI K