国家/地区 德国（17）
IPC部 H（15） G（9） B（6）
C（5）
IPC大类 H01（13） G01（8） B81（5）
C01（5） H04（4） B82（2）
IPC小类 H01L（11） B81B（5） B81C（5）
C01B（5） G01N（4） H04R（4）
G01L（3） B82Y（2） G01M（2）
G01R（2） H01M（2）
IPC H01L029/16（9） B81B007/02（5） B81C001/00（5）
G01N027/12（4） H01L021/02（4） B81B003/00（3）
C01B031/04（3） G01N033/00（3） H01L021/324（3）
H01L029/06（3） H01L029/66（3） H01L029/78（3）
H01L043/14（3） G01N027/72（2） G01R033/07（2）
发明人 RUHL G（11） RUHR G（6） SCHULZE H（4）
DEHE A（2） DEU A（2） KOENIG M（2）
RUPP R（2）
公开年 2015（4） 2016（3） 2018（2） 2023（2）
申请年 2014（4）  2015（3）  2016（3）  2021（3）  2012（2） 
专利权人 INFINEON TECHNOLOGIES AG（17）

Differential gas sensor used for detection, storage and transportation of gaseous hydrogen in container or line, has second sensor component that is configured to supply second output signal and circuit which is configured to determine difference between first and second output signals.

MEINHOLD D, BRANDL F

Chip module has coating of electrically conductive area that is provided with layer of organic silicon compound or carbon compound in thickness, which has specific electrical surface contact resistance.

PUESCHNER F, SPOETTL T

Gas sensor for detection of hydrogen, has cavity that is hermetically sealed except for gas passage structure, and one or more sensor elements are configured to detect presence of one or more gases in cavity.

SCHALLER R M, EBERL M, JOST F, HEBERT M

Method for producing graphene-based sensor, involves matching set of separating structures and tensile strength of graphene layer to one another such that graphene layer tears at separating structures during wet-chemical transfer.

GLACER C, PINDL S, WITTMANN S, WEBER W

Method for forming graphene membrane component for microphone, involves performing energy of adhesion between adhesive layer and graphene membrane which is greater than energy of adhesion between bulk region and graphene membrane.

RUHL G, KOENIG M, RUHR G

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Method for manufacturing semiconductor component, involves providing carrier wafer and silicon carbide wafer, and bonding silicon carbide layer with carrier wafer during splitting process for forming graphene material on carbide layer.

RUHL G, SCHULZE H, LIPPERT G, ZIMMER T

Electronic device e.g. passive element, has dielectric structure whose first contact region and second contact region are configured to adjust electrical characteristics of two-dimensional material in contact surfaces of graphene layer.

KOENIG M, RUHL G, RUHR G

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K