国家/地区 欧洲专利局（EPO）（26）
IPC部 H（26） C（9） B（7）
G（3）
IPC大类 H01（26） C01（9） B82（4）
B01（2） C23（2） G03（2）
H10（2）
IPC小类 H01L（18） C01B（9） H01M（6）
B82Y（4） B01J（2） C23C（2）
G03F（2） H01J（2） H10B（2）
IPC H01L029/16（11） H01L021/02（7） H01L029/78（7）
H01L029/06（6） H01L029/417（6） H01L029/66（6）
H01L029/786（6） H01L021/336（5） H01L021/768（5）
H01L029/778（5） H01M004/62（5） H01L023/532（4）
H01L029/423（4） H01M004/02（4） H01M004/36（4）
发明人 LEE C（26）
公开年 2022（6） 2023（6） 2014（3） 2015（3） 2013（2） 2017（2） 2020（2） 2021（2）
申请年 2022（8）  2021（5）  2013（4）  2014（2）  2015（2）  2016（2）  2019（2） 
专利权人 SAMSUNG ELEC.（19） LG ENERGY SO.（5） UNIST ULSAN .（2）

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Process of producing cathode electrocatalyst for metal-air batteries, involves providing carbon source suspension that includes an inorganic carbon source, metal source solution including a metal source, and nitrogen source solution including a nitrogen source.

LEE C, PAN C, KUO Y, LEE C I, PAN C J, GUO Y S

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S

Positive electrode for lithium-sulfur battery, comprises positive electrode current collector and positive electrode active material layer positioned on at least one surface of positive electrode current collector.

KANG D Y, YANG S, LEE C, SONG M, MYUNGJUN S, LI C, KANG D

Positive electrode used for lithium-sulfur battery, comprises positive electrode current collector and positive electrode active material layer comprising sulfur-carbon composite containing carbon material and sulfur positioned on at least one surface of positive electrode current collector.

KANG D Y, LEE C, LI C, KANG D

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Sulfur-carbon composite used in positive electrode used for lithium-sulfur battery, comprises porous carbon material and sulfur in specific portion of interior and surface of porous carbon material, where porous carbon material has specific electrical conductivity at specific powder density.

KIM I, LEE C, KIM I T, LI C, JIN R

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X