国家/地区 韩国（10）
IPC部 C（10）
IPC大类 C23（10） C01（7） H01（6）
B01（2） H05（2）
IPC小类 C23C（10） C01B（7） H01L（4）
H01J（3） B01J（2） H01M（2）
H05H（2）
IPC C23C016/44（10）
发明人 IFUKU R（2） MATSUMOTO T（2） PARK J G（2）
SUGIURA M（2） UEDA H（2） WADA M（2）
公开年 2021（10）
申请年 2020（4）  2019（3）  2021（3） 
专利权人 TOKYO ELECTR.（2） UNIV SINGAPO.（2）

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Forming silicon carbide coating layer by chemical vapor reaction process, comprises placing metallic silicon powder on bottom of chamber, positioning carbon-containing material, and raising and maintaining temperature inside chamber.

LIMKWANGHYUN, SHIN I C, LIM B J, CHO N C, PARK J G, LEE H, LEE J

Depositing large-area graphene layer involves forming titanium layer on substrate by sputtering, and reducing titanium layer by spraying a reductant gas and a purge gas onto the titanium layer when it is moved in a first direction.

EOM J H, YOON S G, HAN J H, SONG C K, YOON D H, YOUN D H, GYU S

Core-shell structure useful in anode material for secondary batteries comprises metal core, and shell which is graphene.

CHOI H Y, PARK J W, EUGENE L, DOH C H, BAE Y

Silicon-carbon composites in anode active material for secondary battery comprises core-shell structure comprising e.g. core comprising silicon-containing constituent with silicon crystal and first carbon and shell comprising second carbon.

OH S M, PARK J G, LIM J

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L