国家/地区 韩国（32）
IPC部 C（32）
IPC大类 C01（32） B01（14） H01（7）
G03（6） C08（4） B32（3）
B82（3） C23（3） C09（2）
G02（2）
IPC小类 C01B（32）
IPC C01B031/04（10） C01B032/182（10） C01B031/02（8）
C01B032/184（7） G03F001/62（6） G03F001/22（5）
B01J019/18（4） C01B032/194（4） H01B005/14（3）
B01J004/00（2） B01J019/10（2） B01J019/12（2）
B01J019/24（2） B01J019/28（2） B82B003/00（2）
发明人 YANG W S（16） KIM H K（14） KIM H Y（5）
MI K H（5） KIM H（4） KIMHYUNGKEUN（4）
CHO J W（3） HAN S H（3） JOJINWOO（3）
KIM H M（3） KIM S G（3） KIM S K（3）
KIM Y N（3） JEONJUNHYUCK（2） KIM B G（2）
公开年 2013（6） 2017（6） 2018（5） 2015（3） 2021（3） 2023（3） 2016（2） 2022（2）
申请年 2016（10）  2012（4）  2014（4）  2021（4）  2020（3）  2011（2）  2017（2） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（32）

Pellicle used for exposure to extreme UV rays, comprises substrate having opening formed in central portion, etch stop layer formed on substrate to cover opening, and nanoporous graphene layer in which nanopores are formed on graphene layer, provided on etch stop layer.

KIMHYUNGKEUN, MI K H, KIM S K, JOJINWOO, KIM H Y

Graphene manufacturing apparatus comprises supply unit, moving unit, laser irradiation unit, and collecting unit connected to other side of moving unit to separate and collect graphene powder from graphite oxide powder or graphene oxide powder.

YANG W S, KIM S J, KIMSUNJOO, LEE J G, PARK H, PARK J, KIM B G

Manufacturing graphene comprises disposing graphite oxide powder or graphene oxide powder in laser irradiation area, irradiating laser to graphite oxide powder or graphene oxide powder and recovering graphene powder generated by irradiation.

YANG W S, KIMSUNJOO, LEE J G, PARK H, PARK J, KIM B G, KIM S J

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Manufacturing graphene-metal composite pellicle containing graphene by forming metal catalyst layer on silicon substrate, forming core layer by growing graphene, forming protective layer, forming heat dissipation layer and forming pellicle frame composed of silicon substrate-metal catalyst layer.

KIM H, LEE G, KIMHYUNGKEUN

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Cleaning of graphene oxide involves adding a cation to a graphene oxide solution containing graphene oxide and filtering the graphene oxide solution, and removing cation from the graphene oxide solution to obtain final product.

YANG W S

Producing high purity highly crystalline reduction graphene oxidation of silicon comprises graphite oxidation step of injecting and oxidizing graphite in Kuett-Taylor reactor, forming oxide graphene.

YANG W S