国家/地区 美国（22）
IPC部 C（22） B（15） H（11）
IPC大类 C01（22） B82（12） H01（11）
C23（6） B32（5） C09（4）
C08（3） B05（2）
IPC小类 C01B（22） B82Y（11） B82B（6）
C23C（6） B32B（5） H01B（5）
H01L（4） C09C（3） B05D（2）
C08J（2） C08K（2） H01M（2）
IPC C01B031/04（22）
发明人 LEE S（8） LEE J（7） LEE J K（6）
LEE S H（6） KIM J H（3） KIM J K（3）
LEE W（3） LEE W S（3） AHN J（2）
CHOI W（2） CHOI W K（2） JHON Y M（2）
JOH H（2） KAP L J（2） KIM C（2）
公开年 2012（6） 2015（4） 2010（3） 2011（2） 2014（2） 2016（2）
申请年 2011（4）  2014（4）  2009（3）  2012（3）  2015（2）  2016（2） 
专利权人 KOREA INST SCI TECHNOLOGY（22）

Making porous graphene membrane comprises oxidizing surface of multilayer graphene, reducing oxidized surface to carry out reductive etching, and repeatedly performing series of the above steps twice until nanopores are formed in graphene.

JHON Y M, JHON Y I, LEE S, YOUNG I J, IN J Y

Apparatus for graphene wet transfer comprises reservoir body having reservoirs, barrier structure which is located on reservoir and has separated space formed by barriers, and substrate frame which is located below barrier structure.

KIM C, LEE S, KIM J H, LEE T, SEO M, CHOI J, JHON Y M, WOO D H, LIM C

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W

Preparation of carbon sheets used in e.g. electronic devices, involves growing graphene nanopowder comprised in graphene seed layer into carbon sheet comprising single layered graphene sheet of preset length and graphite sheet.

LEE J, PARK Y, CHOI W, LEE J K, PARK Y S, CHOI W K

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.

KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I