国家/地区 世界知识产权组织（29）
IPC部 C（29）
IPC大类 C23（29） C01（17） H01（17）
B01（4） B32（4） C09（3）
H05（3） B05（2） C25（2）
C30（2） G01（2）
IPC小类 C23C（29） C01B（17） H01L（16）
H01J（5） B32B（4） C09D（3）
B01D（2） B01J（2） B05D（2）
C30B（2） H01M（2） H05H（2）
IPC C23C016/26（29）
发明人 IFUKU R（4） MATSUMOTO T（4） GLASS H（3）
GUINEY I（3） NARKEVICIUTE I（3） THOMAS S（3）
TYLER M（3） VARADARAJAN B N（3） SHARMA K（2）
SUGIURA M（2） UEDA H（2） WADA M（2）
WALLIS R（2）
公开年 2021（29）
申请年 2020（17）  2021（9）  2019（3） 
专利权人 TOKYO ELECTR.（5） LAM RES CORP（3） PARAGRAF LTD（3） EV GROUP THA.（2）

Composite copper foil structure used for copper-clad laminate and printed circuit board, has shell layer comprising N-layer graphene layer and M-layer metal copper layer alternately laminated with each other, and where surface of shell layer close to copper foil core layer is graphene layer.

GAO F, CAI L, ZHANG Q

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Copper catalyst for producing ethanol by carbon dioxide electroreduction, used in electrochemistry, includes metallic copper, and utilizes high surface energy stepped sites as active sites, where longitudinal depth and number of high surface energy stepped sites are controllably adjusted.

SUN X, GONG F, LIU C, XU W, XIAO R

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Method for transmitting a transmission layer from a substrate, such as graphene layer, to a carrier substrate, such as glass substrate and ceramic substrate, involves transmitting a graphene layer from substrate to carrier substrate.

MOKKAPATI V R, POVAZAY B, UHRMANN T, ULLMANN T, MOKKAPATI V R S S, SARMA M V R, THOMAS A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K