国家/地区 世界知识产权组织（14）
IPC部 B（14）
IPC大类 B01（14）
IPC小类 B01J（14）
IPC C01B032/186（14）
发明人 ZHANG X（2）
公开年 2014（3）
申请年 2014（3）  2013（2） 
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Production of graphene on metallic substrate for layered composite, involves depositing layer of carbon barrier material on metallic substrate, depositing layer of chemical vapor deposition catalyst and forming graphene on catalyst layer.

SINGH R, PATWARY S, BANERJEE P C

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y