国家/地区 世界知识产权组织（27）
IPC部 C（27）
IPC大类 C01（27）
IPC小类 C01B（27）
IPC C23C016/26（17） C01B032/186（13） C01B032/194（8）
C23C016/02（8） C01B032/182（6） C23C016/04（6）
C23C016/56（6） H01L021/02（6） B82Y030/00（5）
C23C016/44（5） B82Y040/00（4） C23C016/455（4）
H01L021/768（4） H01M004/36（4） H01M004/38（4）
发明人 GLASS H（2） GUINEY I（2） IFUKU R（2）
MATSUMOTO T（2） NARKEVICIUTE I（2） THOMAS S（2）
TYLER M（2） VARADARAJAN B N（2） WALLIS R（2）
公开年 2021（27）
申请年 2020（17）  2021（9） 
专利权人 TOKYO ELECTR.（3） LAM RES CORP（2） PARAGRAF LTD（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N