国家/地区 韩国（21） 美国（3）
IPC部 H（19） C（10） B（4）
IPC大类 H01（19） C01（6） C23（4）
B82（2）
IPC小类 H01L（17） C01B（6） C23C（4）
H01B（3） B82B（2）
IPC C01B031/02（6） H01B001/04（3） H01L021/205（3）
H01L021/20（2） H01L021/768（2） H01L023/14（2）
H01L027/04（2） H01L031/042（2） H01L033/12（2）
H01L033/22（2）
发明人 HWANG S W（8） CHOI J Y（7） KO G W（7）
SIM S H（7） SONE C S（7） SHIN H J（5）
YOO W J（4） CHUNG H J（3） CHOI J（2）
CHOI W M（2） HO Y G（2） HYEON S S（2）
JUN S（2） JUN S C（2） KIM W（2）
公开年 2013（22）
申请年 2011（22）
专利权人 SAMSUNG ELECTRONICS CO LTD（22）

Resin plating method during manufacture of e.g. electronic equipment, involves forming graphene thin layer on resin substrate by applying expanded graphite dispersion to resin substrate and electroplating resin substrate.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S

Optical detector has graphene sheet containing several graphene oxide pieces, that is spread on light absorption layer on which source electrode and drain electrode are arranged.

JONG Y W, SUK M M, YEONG L D, YEONG L H, LEE D Y, LEE H Y, MIN M S, YOO W J

Method of growing gallium nitride crystalline layer on graphene layer of light emitting device, involves forming gallium nitride buffer layer on gallium seed on graphene layer in specific lower temperature range.

CHOI W M, WOO Y S, CHOI J Y, LEE I H, JEON D W

Heat-treated light emitting device manufacturing method, involves depositing graphene on deformable metal foil-type lead frame, inserting graphene in Quartz tube, and providing light emitting device with graphene.

AN S Y

Light emitting device package has graphene layer that transmits light emitted from active layer so that surface plasmon resonance is increased in interface between metal particle surface layer and graphene layer.

HWANG S W, KO G W, SIM S H, CHUNG H J, SONE C S

Manufacturing a graphene quantum dot, comprises forming a nanosphere layer arranged on a surface of graphene, etching the nanosphere layer to the graphene as etching mask, and removing nanosphere layer from the graphene.

KO G W, SIM S H, HWANG S W, SONE C S

Manufacture of graphene nano-mesh for forming electric component, involves forming graphene layer and filtering membrane having multiple air gaps, and then removing graphene layer by vacuum filtering.

KO G W, SIM S H, HWANG S W, SONE C S

Manufacture of graphene nano ribbon for secondary conductive semiconductor layer electric component, involves arranging multiple nanospheres to predetermined pattern, obtaining nanosphere mold, contacting and preparing graphene layer.

KO G W, SIM S H, HWANG S W, SONE C S

Manufacturing graphene nano ribbon used in electric component, comprises forming grooves and protrusion part by etching mesa on top surface of substrate, forming thin film layer on grooves, and performing reactive ion etching of film layer.

KO G W, SIM S H, HWANG S W, SONE C S

Formation of metallic foil on graphene during manufacture of electronic component, involves plasma-treating graphene under inert gas atmosphere or non-oxidizing atmosphere, and depositing metal.

CHOI M S, LEE S H, YOO W J