国家/地区 美国（7） 世界知识产权组织（6） 中国（5） 日本（3） 台湾（3） 韩国（2）
IPC部 C（11）
IPC大类 C23（11）
IPC小类 C23C（11） C01B（8） B82Y（5）
H01L（3） B01J（2） B05D（2）
B32B（2） C30B（2） H01B（2）
IPC C23C016/02（11）
发明人 DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）
公开年 2013（7） 2012（3）
申请年 2012（11）
专利权人 DENG P（2） GUO H（2） LEI T（2） UNIV XIDIAN（2）
ZHANG K（2） ZHANG Y（2）

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing copper foil by using ethanol and acetone ultrasonic cleaning, introducing acetylene gas, and cooling.

LI W, QI M, REN Z, WANG H

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Producing graphene, comprises forming structures on surface of face-centered cubic metal catalyst substrate having specified orientation, and supplying hydrocarbon to substrate.

KIM K H, MAENG K S, PARK C W, CHA S W, HONG S Y, HONG B H, JUNG M H, KIM K E, PARK S B, BEOM P S, EUN K G, HUI H B, HUI J M, HYEONG K G, SEOP M G, U P C, WON C S, YEON H S

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y