国家/地区 美国（44）
IPC部 C（44）
IPC大类 C23（44） C01（37） B82（31）
B32（19） H01（19） B01（10）
H05（8） B05（7） C30（4）
B44（3） B29（2） C25（2）
D01（2） G02（2）
IPC小类 C23C（44）
IPC C23C016/26（44）
发明人 CHOI J（5） HONG B H（4） KIM H（3）
CHIU P（2） CHIU P W（2） CHOI B（2）
CHOI B L（2） CHOI J Y（2） DENG P（2）
GUO H（2） HONG B（2） HUNLEY D P（2）
KIM Y K（2） LEE E（2） LEE E K（2）
公开年 2013（26） 2012（16） 2014（2）
申请年 2012（44）
专利权人 SAMSUNG ELEC.（5） UNIV SUNGKYU.（5） HANWHA TECHW.（4） SAMSUNG TECH.（4）
HANWHA AEROS.（3） UNIV SUNGKYU.（3） CHIU P（2） CHOI J（2）
DENG P（2） GRAPHENE SQU.（2） GUO H（2） HONG B H（2）
LEI T（2） LIN Y（2） TOSHIBA KK（2） UNIV KENTUCK.（2）
UNIV SUNGKYU.（2） UNIV XIDIAN（2） ZHANG K（2） ZHANG Y（2）

Method for forming graphene film on copper foil, involves placing substrate into reactor, placing solid carbon source into reactor, and heating substrate and source in reactor, where substrate is stacked on top of source in reactor.

LI X, NING H

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Method for synthesizing e.g. graphene film using chemical vapor deposition-type furnace for electronics application, involves positioning two support fixtures in reaction chamber, and unloading substrate from support fixtures.

LI X, LIN Y, SUNG C

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Evaluating graphene synthesis processes involves depositing metal layer within isolated regions by combinatorial manner; synthesizing graphene layer over metal layer; and evaluating grain boundary profiles in synthesized graphene layer.

NIYOGI S, BARSTOW S, PRAMANIK D

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J