国家/地区 中国（10）
IPC部 H（10） B（6） C（4）
IPC大类 H01（10） B82（6） C30（3）
C01（2） C23（2）
IPC小类 H01L（10） B82Y（4） C30B（3）
B82B（2） C01B（2） C23C（2）
IPC H01L033/00（8） H01L033/02（7） H01L033/12（6）
H01L021/02（5） H01L021/20（4） B82Y099/00（3）
H01L029/16（3） H01L033/10（3） H01L033/40（3）
B82B001/00（2） C30B025/04（2） C30B025/18（2）
H01L021/205（2） H01L021/36（2） H01L029/06（2）
发明人 WEI Y（10）
公开年 2013（10）
申请年 2012（10）
专利权人 HON HAI PREC.（10） HONGFUJIN PR.（10） UNIV TSINGHU.（10） FAN S（3）
WEI Y（3）

Epitaxial structure comprises an epitaxial layer defining a patterned surface and a graphene layer on the patterned surface of the epitaxial layer.

WEI Y, FAN S

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having epitaxial growth surface, first epitaxial layer on epitaxial growth surface, graphene layer on first epitaxial layer and second epitaxial layer on first epitaxial layer.

WEI Y, FAN S

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S

LED comprises a substrate comprising epitaxial growth surface, a semiconductor epitaxial layer comprising first and second semiconductor layers and active layer, a first electrode, a second electrode, and a graphene layer.

WEI Y, FAN S

Method for manufacturing epitaxial structure used in semiconductor device e.g. light emitting device, involves forming graphene layer on main epitaxial layer and epitaxially growing sub epitaxial layer on main epitaxial layer.

WEI Y, FAN S

LED, useful as light source in display and projector, comprises substrate comprising epitaxial growth surface, semiconductor epitaxial layer comprising semiconductor and active layers, electrodes, reflection layer and graphene layer.

WEI Y, FAN S

Light emitting diode used as light source in projectors comprises semiconductor epitaxial layer containing two semiconductor layers and active layer; two electrodes on and electrically connected with semiconductor layers; and graphene layer.

WEI Y, FAN S

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S