国家/地区 中国（23） 美国（13） 韩国（7） 世界知识产权组织（6） 日本（4） 台湾（3） 欧洲专利局（EPO）（2） 英国（2）
IPC部 C（39）
IPC大类 C23（39）
IPC小类 C23C（39）
IPC C23C016/02（39）
发明人 CHEN H（2） DIXON S（2） HUANG S（2）
WANG X（2） YANG H（2） ZHANG L（2）
公开年 2022（17） 2021（16） 2023（6）
申请年 2021（39）
专利权人 PARAGRAF LTD（2） UNIV CALIFOR.（2）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.

YOON S G, IREH H

Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.

GAO H, YANG H, BIAN C

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Twin-chamber roll-to-roll graphene film manufacturing device useful for transparent display and flexible display having upper chamber with supply roller for supply catalytic metal film and winding roller for winding catalytic metal film.

KI K Y

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C